Si and Sn doping of ε-Ga2O3 layers-Reference-Cited by-同舟云学术

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Si and Sn doping of ε-Ga2O3 layers

Published:2019-03 Issue:3 Volume:7 Page:031114
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Parisini A.¹^ORCID,Bosio A.¹,Montedoro V.¹²,Gorreri A.¹,Lamperti A.³^ORCID,Bosi M.²^ORCID,Garulli G.¹,Vantaggio S.¹,Fornari R.¹²^ORCID

Affiliation:

1. Department of Mathematical, Physical and Computer Sciences, University of Parma, Viale delle Scienze 7/A, 43124 Parma, Italy

2. Institute of Materials for Electronics and Magnetism (IMEM-CNR), Viale delle Scienze 37/A, 43124 Parma, Italy

3. Institute for Microelectronics and Microsystems, CNR-IMM Agrate Unit, Via Camillo Olivetti 2, 20864 Agrate Brianza (MB), Italy

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5050982

Reference32 articles.

1. A review of Ga2O3materials, processing, and devices

2. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

3. Development of gallium oxide power devices

4. Donor impurity band exchange in dilute ferromagnetic oxides

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1. Critical role of dopant bond strength in enhancing the conductivity of n-type doped κ-Ga2O3;Physics Letters A;2024-07

2. Sputtered Sn-doped Ga2O3 films under balance controlled of energy supply and ion bombardment for solar-blind detection application;Vacuum;2024-07

3. Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga₂O₃(001);Nano Letters;2024-03-07

4. Proton damage effects in double polymorph γ/β-Ga₂O₃ diodes;Journal of Materials Chemistry C;2024

5. Impact of Hydrogen Plasma on Electrical Properties and Deep Trap Spectra in Ga2O3 Polymorphs;Crystals;2023-09-20

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