Proton damage effects in double polymorph γ/β-Ga2O3 diodes

Author:

Polyakov Alexander Y.1,Vasilev Anton A.1ORCID,Kochkova Anastasiia I.1,Shchemerov Ivan V.1,Yakimov Eugene B.12,Miakonkikh Andrej V.3,Chernykh Alexei V.1,Lagov Petr B.14ORCID,Pavlov Yrii S.4ORCID,Doroshkevich A. S.5,Isaev R. Sh.5,Romanov Andrei A.1ORCID,Alexanyan Luiza A.1,Matros Nikolai1,Azarov Alexander6,Kuznetsov Andrej6,Pearton Stephen7ORCID

Affiliation:

1. National University of Science and Technology MISIS, Moscow, Leninsky pr. 4, Moscow 119049, Russia

2. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 6 Academician Ossipyan Str., Chernogolovka, Moscow Region 142432, Russia

3. Valiev Institute of Physics and Technology, Russian Academy of Sciences, Nahimovsky Ave, 36(1), Moscow, 117218, Russia

4. Laboratory of Radiation Technologies, A. N. Frumkin Institute of Physical Chemistry and Electrochemistry Russian Academy of Sciences, Moscow 119071, Russia

5. Joint Institute for Nuclear Research, Joliot-Curie 6, Dubna, Moscow Region, 141980, Russia

6. Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, N-0316 Oslo, Norway

7. Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA

Abstract

The stable beta polymorph Ga2O3 was converted to gamma polymorph by ion irradiation. The current–voltage characteristics show the gamma polymorph is much more rad-hard.

Funder

Norges Forskningsråd

Ministry of Science and Higher Education of the Russian Federation

Defense Threat Reduction Agency

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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