Perspective: Ga2O3for ultra-high power rectifiers and MOSFETS-Reference-Cited by-同舟云学术

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Perspective: Ga2O3for ultra-high power rectifiers and MOSFETS

Published:2018-12-14 Issue:22 Volume:124 Page:220901
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Pearton S. J.¹^ORCID,Ren Fan²^ORCID,Tadjer Marko³,Kim Jihyun⁴

Affiliation:

1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

2. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA

3. U.S. Naval Research Laboratory, Washington, DC 20375, USA

4. Department of Chemical and Biological Engineering, Korea University, Seoul 02841, South Korea

Funder

Defense Threat Reduction Agency

Korea Institute of Energy Technology Evaluation and Planning

Office of Naval Research Global

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5062841

Reference249 articles.

1. Power Semiconductor Devices for Smart Grid and Renewable Energy Systems

2. Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors

3. Design and Implementation of a Highly Efficient Three-Level T-Type Converter for Low-Voltage Applications

4. Characterization and Scalable Modeling of Power Semiconductors for Optimized Design of Traction Inverters with Si- and SiC-Devices

5. IEEE ITRW Working Group Position Paper-System Integration and Application: Silicon Carbide: A Roadmap for Silicon Carbide Adoption in Power Conversion Applications

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1. High-performance normally-off Si-doped β-Ga2O3 deep ultraviolet phototransistor grown on N-doped β-Ga2O3;Applied Surface Science;2025-01

2. The influence of oxygen partial pressure on the properties of sputtered vertical NiO/β-Ga2O3 heterojunction diodes;Materials Science in Semiconductor Processing;2024-12

3. Improved electrical performance for SiO2/β-Ga2O3 (001) MIS capacitor by post-deposition annealing;Materials Science in Semiconductor Processing;2024-12

4. Anomalous dynamic performance in heterogeneous Ga₂O₃-on-SiC MOSFETs fabricated using ion-implantation cutting process;Physica Scripta;2024-09-04

5. Unraveling Abnormal Thermal Quenching of Sub‐Gap Emission in β‐Ga₂O₃;Advanced Electronic Materials;2024-09

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