Improved electrical performance for SiO2/β-Ga2O3 (001) MIS capacitor by post-deposition annealing-Reference-Cited by-同舟云学术

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Improved electrical performance for SiO2/β-Ga2O3 (001) MIS capacitor by post-deposition annealing

Published:2024-12 Issue: Volume:184 Page:108777
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Zhang Qihao^ORCID,Zhai Dongyuan,He Min,Lu Jiwu^ORCID

Publisher

Elsevier BV

Reference33 articles.

1. A review of Ga2O3 materials, processing, and devices;Pearton;Appl. Phys. Rev.,2018

2. Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS;Pearton;J. Appl. Phys.,2018

3. Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy;Murakami;Appl. Phys. Express,2015

4. Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping;Víllora;Appl. Phys. Lett.,2008

5. Ultra-wide bandgap semiconductor Ga2O3 power diodes;Zhang;Nat. Commun.,2022

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