Homoepitaxial growth of β-Ga2O3layers by halide vapor phase epitaxy-Reference-Cited by-同舟云学术

Homoepitaxial growth of β-Ga2O3layers by halide vapor phase epitaxy

Published:2014-12-11 Issue:1 Volume:8 Page:015503
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Murakami Hisashi,Nomura Kazushiro,Goto Ken,Sasaki Kohei,Kawara Katsuaki,Thieu Quang Tu,Togashi Rie,Kumagai Yoshinao,Higashiwaki Masataka,Kuramata Akito,Yamakoshi Shigenobu,Monemar Bo,Koukitu Akinori

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/8/i=1/a=015503/pdf

Reference23 articles.

1. Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors

2. Ga2O3Thin Film Growth onc-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors

3. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

4. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

5. Development of gallium oxide power devices

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