Development of gallium oxide power devices-Reference-Cited by-同舟云学术

Development of gallium oxide power devices

Published:2013-11-13 Issue:1 Volume:211 Page:21-26
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Higashiwaki Masataka¹,Sasaki Kohei²¹,Kuramata Akito²,Masui Takekazu³,Yamakoshi Shigenobu²

Affiliation:

1. National Institute of Information and Communications Technology; 4-2-1 Nukui-Kitamachi Koganei, Tokyo 184-8795 Japan

2. Tamura Corporation; 2-3-1 Hirosedai Sayama Saitama 350-1328 Japan

3. Koha Co., Ltd.; 2-6-8 Kouyama Nerima, Tokyo 176-0022 Japan

Funder

New Energy and Industrial Technology Development Organization

PRESTO program of the Japan Science and Technology Agency

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201330197/fullpdf

Reference21 articles.

1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

2. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

3. Deep-ultraviolet transparent conductive β-Ga2O3 thin films

4. First-principles study of the structural, electronic, and optical properties ofGa2O3in its monoclinic and hexagonal phases

5. Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals

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