Electronic structure and surface band bending of Sn-doped <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>β</mml:mi><mml:mtext>−</mml:mtext><mml:msub><mml:mi>Ga</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math> thin films studied by x-ray photoemission spectroscopy and <i>ab initio</i> calculations-Reference-Cited by-同舟云学术

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Electronic structure and surface band bending of Sn-doped β−Ga2O3 thin films studied by x-ray photoemission spectroscopy and ab initio calculations

Published:2024-09-11 Issue:11 Volume:110 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Zhang Jiaye¹,Yang Zhenni¹²^ORCID,Kuang Siliang¹²,Zhang Ziqi¹,Wei Shenglong¹,Willis Joe³³⁴,Lee Tien-Lin⁴,Mazzolini Piero⁵^ORCID,Bierwagen Oliver⁶,Chen Shanquan⁷,Chen Zuhuang⁷,Chen Duanyang⁸⁹,Qi Hongji²⁸⁹,Scanlon David³³¹⁰,Zhang Kelvin H. L.¹^ORCID

Affiliation:

1. Xiamen University

2. Hangzhou Institute of Optics and Fine Mechanics

3. University College London

4. Diamond Light Source Ltd.

5. University of Parma

6. Paul-Drude-Institut für Festkörperelektronik

7. Harbin Institute of Technology

8. Shanghai Institute of Optics and Fine Mechanics

9. Chinese Academy of Sciences

10. The University of Birmingham

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Diamond Light Source

Engineering and Physical Sciences Research Council

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.110.115120/fulltext

Reference62 articles.

1. Development of gallium oxide power devices

2. A review of Ga2O3materials, processing, and devices

3. β-Gallium oxide power electronics

4. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

5. Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

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