A review of Ga2O3materials, processing, and devices-Reference-Cited by-同舟云学术

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A review of Ga2O3materials, processing, and devices

Published:2018-03 Issue:1 Volume:5 Page:011301
ISSN:1931-9401
Container-title:Applied Physics Reviews
language:en
Short-container-title:Applied Physics Reviews

Author:

Pearton S. J.¹^ORCID,Yang Jiancheng²,Cary Patrick H.²^ORCID,Ren F.²,Kim Jihyun³,Tadjer Marko J.⁴,Mastro Michael A.⁴

Affiliation:

1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

2. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA

3. Department of Chemical and Biological Engineering, Korea University, Seoul 02841, South Korea

4. US Naval Research Laboratory, Washington, DC 20375, USA

Funder

Korean Institute of Energy Technology Evaluation and Planning

DOD | Defense Threat Reduction Agency

National Research Foundation of Korea

DOD | United States Navy | Office of Naval Research

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5006941

Reference750 articles.

1. Polymorphism of Ga2O3 and the System Ga2O3—H2O

2. Group-III Sesquioxides: Growth, Physical Properties and Devices

3. Structures and energetics of Ga2O3polymorphs

4. First-principles study of the structural, electronic, and optical properties ofGa2O3in its monoclinic and hexagonal phases

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