Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices-Reference-Cited by-同舟云学术

Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

Published:2021-04 Issue:50 Volume:33 Page:2006230
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Shi Jueli¹,Zhang Jiaye¹,Yang Lu¹,Qu Mei¹,Qi Dong‐Chen²,Zhang Kelvin H. L.¹^ORCID

Affiliation:

1. State Key Laboratory of Physical Chemistry of Solid Surfaces Collaborative Innovation Center of Chemistry for Energy Materials College of Chemistry and Chemical Engineering Xiamen University Xiamen 361005 China

2. Centre for Materials Science School of Chemistry and Physics Queensland University of Technology Brisbane Queensland 4001 Australia

Funder

National Natural Science Foundation of China

Australian Research Council

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202006230

Reference410 articles.

1. Metal oxides for optoelectronic applications

2. Past achievements and future challenges in the development of optically transparent electrodes

3. n-Type doped transparent conducting binary oxides: an overview

4. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

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