Femtosecond laser controllable annealing for color centers based on ion-implanted silicon carbide substrate-Reference-Cited by-同舟云学术

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Femtosecond laser controllable annealing for color centers based on ion-implanted silicon carbide substrate

Published:2024-09 Issue: Volume: Page:
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Wang Jianshi,Song Ying,Dong Bing,Zhao Yukun,Sun Qingqing,Yan Mengzhi,Yao Chengqi,Du Quanbin,Xu Zongwei^ORCID

Publisher

Elsevier BV

Reference52 articles.

1. Fluorescent silicon carbide nanoparticles;de Vries;Adv. Opt. Mater.,2021

2. Review of silicon carbide power devices and their applications;She;IEEE Trans. Ind. Electron.,2017

3. Silicon carbide filters and porous membranes: a review of processing, properties, performance and application;Hotza;J. Membr. Sci.,2020

4. Gallium nitride as an electromechanical material;Rais-Zadeh;J. Microelectromech. Syst.,2014

5. Gallium nitride devices for power electronic applications;Baliga;Semicond. Sci. Technol.,2013

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