First-principles study of the structural, electronic, and optical properties ofGa2O3in its monoclinic and hexagonal phases-Reference-Cited by-同舟云学术

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First-principles study of the structural, electronic, and optical properties ofGa2O3in its monoclinic and hexagonal phases

Published:2006-11-27 Issue:19 Volume:74 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

He Haiying,Orlando Roberto,Blanco Miguel A.,Pandey Ravindra,Amzallag Emilie,Baraille Isabelle,Rérat Michel

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.74.195123/fulltext

Reference52 articles.

1. Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy

2. Gallium oxide as an insulating barrier for spin-dependent tunneling junctions

3. ORIGIN OF THE BLUE LUMINESCENCE OF β-Ga2O3

4. Electron mobility in single‐ and polycrystalline Ga2O3

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1. Advances and prospects in Ga2O3/GaN heterojunctions: From fabrication to high-performance devices;Materials Science in Semiconductor Processing;2025-01

2. First-principle calculations of the electronic structure and optical properties of β-Ga2O3 with various vacancy defects;Vacuum;2024-11

3. Analysis of deep level defects in nitrogen post-deposition annealed Ga2O3/SiC hetero-structured Schottky diodes grown by mist-CVD;Applied Physics A;2024-09-10

4. Oxygen-close-packed (310)-plane substrates of β-Ga2O3 grown by the casting method;Applied Physics Letters;2024-09-02

5. Composition and strain of the pseudomorphic α-phase intermediate layer at the Ga2O3/Al2O3 interface;APL Materials;2024-09-01

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