High-performance normally-off Si-doped β-Ga2O3 deep ultraviolet phototransistor grown on N-doped β-Ga2O3-Reference-Cited by-同舟云学术

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High-performance normally-off Si-doped β-Ga2O3 deep ultraviolet phototransistor grown on N-doped β-Ga2O3

Published:2025-01 Issue: Volume:679 Page:161165
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kim Sunjae,Kim Hyeong-Yun,Kim Yongki,Jeon Dae-Woo,Hwang Wan Sik,Park Ji-Hyeon

Funder

Korea Ministry of Trade Industry and Energy

Korea Ministry of Education

Defense Acquisition Program Administration

Korea Institute of Ceramic Engineering and Technology

Publisher

Elsevier BV

Reference77 articles.

1. A review of Ga2O3 materials, processing, and devices;Pearton;Appl. Phys. Rev.,2018

2. β-Ga2O3 material properties, growth technologies, and devices: a review;Higashiwaki;AAPPS Bull.,2022

3. Materials issues and devices of α-and β-Ga2O3;Ahmadi;J. Appl. Phys.,2019

4. Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation;Wong;Appl. Phys. Lett.,2018

5. Influence of high-energy proton irradiation on β-Ga2O3 nanobelt field-effect transistors;Yang;ACS Appl. Mater. Interfaces,2017

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