Impact of Hydrogen Plasma on Electrical Properties and Deep Trap Spectra in Ga2O3 Polymorphs

Author:

Polyakov Alexander Y.1ORCID,Yakimov Eugene B.12ORCID,Nikolaev Vladimir I.134,Pechnikov Alexei I.134,Miakonkikh Andrej V.5ORCID,Azarov Alexander6ORCID,Lee In-Hwan7ORCID,Vasilev Anton A.1ORCID,Kochkova Anastasiia I.1ORCID,Shchemerov Ivan V.1,Kuznetsov Andrej6ORCID,Pearton Stephen J.8ORCID

Affiliation:

1. Department of Semiconductor Electronics and Physics of Semiconductors, National University of Science and Technology MISIS, Leninsky pr. 4, Moscow 119049, Russia

2. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 6 Academician Ossipyan str., Chernogolovka, Moscow 142432, Russia

3. Perfect Crystals LLC, 38k1 Toreza Avenue, off.213, Saint Petersburg 194223, Russia

4. Ioffe Institute, 26 Politekhnicheskaya, Saint Petersburg 194021, Russia

5. Valiev Institute of Physics and Technology, Russian Academy of Sciences (Valiev IPT RAS), Nahimovsky Ave, 36(1), Moscow 117218, Russia

6. Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, N-0316 Oslo, Norway

7. Department of Materials Science and Engineering, Korea University, Anamro 145, Seoul 02841, Republic of Korea

8. Department of Material Science and Engineering, University of Florida, Gainesville, FL 32611, USA

Abstract

In this study, the results of hydrogen plasma treatments of β-Ga2O3, α-Ga2O3, κ-Ga2O3 and γ-Ga2O3 polymorphs are analyzed. For all polymorphs, the results strongly suggest an interplay between donor-like hydrogen configurations and acceptor complexes formed by hydrogen with gallium vacancies. A strong anisotropy of hydrogen plasma effects in the most thermodynamically stable β-Ga2O3 are explained by its low-symmetry monoclinic crystal structure. For the metastable, α-, κ- and γ-polymorphs, it is shown that the net result of hydrogenation is often a strong increase in the density of centers supplying electrons in the near-surface regions. These centers are responsible for prominent, persistent photocapacitance and photocurrent effects.

Funder

Ministry of Science and Higher Education of the Russian Federation

Research Council of Norway

Norwegian Directorate for Higher Education and Skills

Department of Defense, the Defense Threat Reduction Agency

Publisher

MDPI AG

Subject

Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Proton damage effects in double polymorph γ/β-Ga2O3 diodes;Journal of Materials Chemistry C;2024

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