Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga<sub>2</sub>O<sub>3</sub>(001)-Reference-Cited by-同舟云学术

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Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga₂O₃(001)

Published:2024-03-07 Issue:13 Volume:24 Page:3978-3985
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Tsai Yuhua¹²^ORCID,Hashimoto Yusuke³,Sun ZeXu³,Moriki Takuya³,Tadamura Takashi³,Nagata Takahiro¹^ORCID,Mazzolini Piero⁴⁵^ORCID,Parisini Antonella⁴^ORCID,Bosi Matteo⁵^ORCID,Seravalli Luca⁵^ORCID,Matsushita Tomohiro³^ORCID,Yamashita Yoshiyuki¹²^ORCID

Affiliation:

1. National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

2. Department of Applied Chemistry, Faculty of Engineering, Kyushu University, Fukuoka 819-0395, Japan

3. Nara Institute of Science and Technology, Ikoma, Nara 630-0192, Japan

4. Department of Mathematical Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/A, 43124 Parma, Italy

5. IMEM-CNR, Parco Area delle Scienze 37/A, 43124 Parma, Italy

Funder

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.4c00482

Reference60 articles.

1. A review of Ga2O3materials, processing, and devices

2. Recent progress on the electronic structure, defect, and doping properties of Ga2O3

3. Prospects for phase engineering of semi-stable Ga₂O₃ semiconductor thin films using mist chemical vapor deposition

4. Recent progress on the effects of impurities and defects on the properties of Ga₂O₃

5. Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin Film

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Efficiency Doping Outcomes in Homoepitaxial β-Ga₂O₃ Films via Pulsed Si Doping with MOCVD;Crystal Growth & Design;2024-09-13

2. Critical role of dopant bond strength in enhancing the conductivity of n-type doped κ-Ga2O3;Physics Letters A;2024-07

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