High-Efficiency Doping Outcomes in Homoepitaxial β-Ga<sub>2</sub>O<sub>3</sub> Films via Pulsed Si Doping with MOCVD-Reference-Cited by-同舟云学术

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High-Efficiency Doping Outcomes in Homoepitaxial β-Ga₂O₃ Films via Pulsed Si Doping with MOCVD

Published:2024-09-13 Issue: Volume: Page:
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Wang Yao¹²³^ORCID,Feng Qian¹²³,Wu Wenkai¹²³,Liu Yuhong¹²³,Zhang Yachao¹²³,Zhang Jincheng¹²³^ORCID,Hao Yue¹²³

Affiliation:

1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China

2. Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an 710071, China

3. State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi’an 710071, China

Funder

National Natural Science Foundation of China

Science and Technology on Reliability Physics and Applications Technology of Electronic Component Laboratory

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.4c01049

Reference60 articles.

1. Brillouin zone and band structure of β-Ga2O3

2. Quasiparticle bands and spectra ofGa2O3polymorphs

3. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

4. Intrinsic electron mobility limits inβ-Ga2O3

5. Power semiconductor device figure of merit for high-frequency applications

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