Intrinsic electron mobility limits inβ-Ga2O3
Author:
Funder
NSF DMREF
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4968550
Reference40 articles.
1. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3
2. Oxygen vacancies and donor impurities in β-Ga2O3
3. High-mobility β-Ga2O3($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact
4. Recent progress in Ga2O3power devices
5. MBE grown Ga2O3 and its power device applications
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