Recent progress in Ga2O3power devices-Reference-Cited by-同舟云学术

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Recent progress in Ga2O3power devices

Published:2016-01-18 Issue:3 Volume:31 Page:034001
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Higashiwaki Masataka,Sasaki Kohei,Murakami Hisashi,Kumagai Yoshinao,Koukitu Akinori,Kuramata Akito,Masui Takekazu,Yamakoshi Shigenobu

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/31/i=3/a=034001/pdf

Reference45 articles.

1. Polymorphism of Ga2O3 and the System Ga2O3—H2O

2. Heteroepitaxy of Corundum-Structured α-Ga2O3Thin Films on α-Al2O3Substrates by Ultrasonic Mist Chemical Vapor Deposition

3. Epitaxial Nd-doped α-(Al_1−xGa_x)_2O_3 films on sapphire for solid-state waveguide lasers

4. Room temperature ferromagnetism in Mn-doped γ-Ga2O3 with spinel structure

5. Epitaxial growth of γ-Ga2O3 films by mist chemical vapor deposition

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