Unveiling the orientation growth mechanism and solar-blind response performance of β-Ga2O3 (100) film on SiC substrate with AlN buffer layer-Reference-Cited by-同舟云学术

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Unveiling the orientation growth mechanism and solar-blind response performance of β-Ga2O3 (100) film on SiC substrate with AlN buffer layer

Published:2025-03 Issue: Volume:210 Page:20-28
ISSN:1005-0302
Container-title:Journal of Materials Science & Technology
language:en
Short-container-title:Journal of Materials Science & Technology

Author:

Su Jie^ORCID,Zhang Zixin,Shi Liang,Feng Liping,He Fuchao,Chang Jingjing,Zhang Jincheng,Hao Yue

Funder

Basic and Applied Basic Research Foundation of Guangdong Province

National Key Research and Development Program of China

Xidian University

Shanxi Provincial Key Research and Development Project

State Key Laboratory of Solidification Processing

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference63 articles.

1. A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

2. Flexible Phototransistors Based on Single‐Crystalline Silicon Nanomembranes

3. Unusual Electronic and Optical Properties of Two-Dimensional Ga2O3 Predicted by Density Functional Theory

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation and Comparison of the Performance for β-Ga2O3 Solar-Blind Photodetectors Grown on Patterned and Flat Sapphire Substrate;Crystals;2024-07-07

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