Dissociation of 13<101‾1> misfit dislocation at the interface of α-Ga2O3 thin film deposited on m-plane sapphire
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Published:2024-12
Issue:
Volume:184
Page:108778
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ISSN:1369-8001
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Container-title:Materials Science in Semiconductor Processing
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language:en
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Short-container-title:Materials Science in Semiconductor Processing
Author:
Myasoedov A.V.ORCID,
Pavlov I.S.,
Morozov A.V.,
Pechnikov A.I.,
Stepanov S.I.,
Nikolaev V.I.