Growth mechanism ofα-Ga2O3on a sapphire substrate by mist chemical vapor deposition using acetylacetonated gallium source solutions
Author:
Affiliation:
1. Faculty of Systems Engineering, Wakayama University, Wakayama 640-8510, Japan
Funder
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0014056
Reference26 articles.
1. A review of Ga2O3materials, processing, and devices
2. Materials issues and devices of α- and β-Ga2O3
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4. Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3Substrates
5. Structures of Uncharacterised Polymorphs of Gallium Oxide from Total Neutron Diffraction
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