Materials issues and devices of α- and β-Ga2O3
Author:
Affiliation:
1. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA
2. Optical Single Crystals Group, National Institute for Materials Science, Tsukuba, Ibaraki 3050044, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5123213
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4. Large-size β-Ga2O3 single crystals and wafers
5. Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method
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