Improved heteroepitaxy of κ-Ga2O3 on c-plane sapphire by initial mist flow stabilization during mist chemical vapor deposition
Author:
Funder
College of Engineering, Michigan State University
Publisher
Elsevier BV
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1. Demonstration of β-(Al x Ga1−x )2O3/β-Ga2O3 superlattice growth by mist chemical vapor deposition;Japanese Journal of Applied Physics;2024-09-02
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