High-mobility β-Ga2O3($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/8/i=3/a=031101/pdf
Reference28 articles.
1. Development of gallium oxide power devices
2. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3
3. Deep-ultraviolet transparent conductive β-Ga2O3 thin films
4. Some electrical properties of the semiconductor βGa2O3
5. Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3thin films grown by pulsed laser deposition
Cited by 233 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Characteristics of β-Ga2O3 MOSFETs on polycrystalline diamond via electrothermal modeling;Diamond and Related Materials;2024-02
2. Influence of Energetic Particles and Electron Injection on Minority Carrier Transport Properties in Gallium Oxide;Condensed Matter;2024-01-06
3. The Impact of Anode p+ Islands Layout on the Performance of NiOx/β-Ga₂O₃ Hetero-Junction Barrier Schottky Diodes;IEEE Transactions on Electron Devices;2023-11
4. Analytical model and simulation study of a novel enhancement-mode Ga2O3 MISFET realized by p-GaN gate;Semiconductor Science and Technology;2023-07-24
5. A first-principles study of hydrostatic strain engineering on the electronic properties of β-Ga2O3;Physica B: Condensed Matter;2023-07
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3