Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3thin films grown by pulsed laser deposition-Reference-Cited by-同舟云学术

Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3thin films grown by pulsed laser deposition

Published:2013-11-18 Issue:1 Volume:211 Page:40-47
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Splith Daniel¹,Müller Stefan¹,Schmidt Florian¹,von Wenckstern Holger¹,van Rensburg Johan Janse²,Meyer Walter E.²,Grundmann Marius¹

Affiliation:

1. Institut für Experimentelle Physik II; Universität Leipzig; Linnéstraße 5 04103 Leipzig Germany

2. Department of Physics; University of Pretoria; Lynnwood Road Pretoria 0002 South Africa

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

2. Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3Substrates

3. Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing

4. Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method

5. Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3

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