MBE grown Ga2O3 and its power device applications
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3
2. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
3. Power semiconductor device figure of merit for high-frequency applications
4. Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals
5. Large-size β-Ga2O3 single crystals and wafers
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1. Temperature-dependent capacitance-voltage characteristics of β-Ga2O3 Schottky barrier diodes with (001) epitaxial grown layer using MOCVD;Materials Science in Semiconductor Processing;2024-04
2. Orientation-dependent atomic-scale mechanism and defect evolution in β-Ga2O3 thin film epitaxial growth;Applied Physics Letters;2024-01-08
3. Low resistance Ohmic contact of multi-metallic Mo/Al/Au stack with ultra-wide bandgap Ga2O3 thin film with post-annealing and its in-depth interface studies for next-generation high-power devices;Surfaces and Interfaces;2024-01
4. Unraveling the atomic mechanism of the disorder–order phase transition from γ-Ga2O3 to β-Ga2O3;APL Materials;2024-01-01
5. High conductivity of n-type β-Ga2O3(010) thin films achieved through Si doping by mist chemical vapor deposition;AIP Advances;2024-01-01
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