Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin Film-Reference-Cited by-同舟云学术

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Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin Film

Published:2019-01-03 Issue:1 Volume:14 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Hu Zhuangzhuang,Feng Qian,Feng Zhaoqing,Cai Yuncong,Shen Yixian,Yan Guangshuo,Lu Xiaoli,Zhang Chunfu,Zhou Hong,Zhang Jincheng,Hao Yue

Funder

National ey R&D Program of China

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-018-2837-2.pdf

Reference36 articles.

1. Murakami H, Nomura K, Goto K, Sasaki K, Kawara K, Thieu QT, Togashi R, Kumagai Y, Higashiwaki M, Kuramata A (2014) Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy. Appl Phys Express 8:015503

2. Higashiwaki M, Sasaki K, Kuramata A, Masui T, Yamakoshi S (2012) Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates. Appl Phys Lett 100:013504

3. Armstrong AM, Crawford MH, Jayawardena A, Ahyi A, Dhar S (2016) Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes. J Appl Phys 119:103102

4. Higashiwaki M, Sasaki K, Murakami H, Kumagai Y, Koukitu A, Kuramata A, Masui T, Yamakoshi S (2016) Recent progress in Ga2O3 power devices. Semicond Sci Tech 31:034001

5. Sasaki K, Higashiwaki M, Kuramata A, Masui T, Yamakoshi S (2013) Ga2O3 Schottky barrier diodes fabricated by using single-crystal Ga2O3 (010) substrates. IEEE Electr Device Lett 34:493–495

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1. Gallium Oxide‐Based Field Effect Transistors;physica status solidi (a);2024-07-17

2. Mo/Au β-Ga₂O₃ Schottky Barrier Diodes With Low Turn-On Voltage and High On–Off Ratios for Low-Power Consumption Applications;IEEE Transactions on Electron Devices;2024-06

3. Studies of carrier transport mechanism in NiO/Ag/NiO transparent conducting electrode/ZnO metal-semiconductor-metal photodetectors;Nanotechnology;2024-05-30

4. Enhanced Supercapacitive Performance in Catalyst‐Free Binary Composite SnO₂–RuO₂ Nanostructured Thin Films for Symmetric Supercapacitor Device;Energy Technology;2024-05-09

5. Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga₂O₃(001);Nano Letters;2024-03-07

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