Recent progress on the effects of impurities and defects on the properties of Ga<sub>2</sub>O<sub>3</sub>-Reference-Cited by-同舟云学术

Recent progress on the effects of impurities and defects on the properties of Ga₂O₃

Published:2022 Issue:37 Volume:10 Page:13395-13436
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Yifei¹²^ORCID,Su Jie¹²^ORCID,Lin Zhenhua¹²,Zhang Jincheng¹²,Chang Jingjing¹²^ORCID,Hao Yue¹²

Affiliation:

1. State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an, 710071, China

2. Advanced Interdisciplinary Research Center for Flexible Electronics, Academy of Advanced Interdisciplinary Research, Xidian University, 2 South Taibai Road, Xi’an, 710071, China

Abstract

Herein, the effects of impurities (e.g., donors, acceptors, co-doping impurities, Al and In, and surface passivators) and defects (e.g., intrinsic defects and deep-level defects) on the material properties of Ga2O3 are summarized.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Fundamental Research Funds for the Central Universities

Xidian University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC01128J

Reference417 articles.