Wide bandgap and ultra-wide bandgap semiconductors
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Published:2021-11
Issue:6
Volume:1
Page:655
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ISSN:2667-3258
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Container-title:Fundamental Research
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language:en
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Short-container-title:Fundamental Research
Author:
Hao Yue,Jiang Fengyi
Cited by
2 articles.
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1. AlGaN/AlN/GaN High Electron Mobility Transistor Electromagnetic Physical Model: Simulation and Measurement;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
2. Recent progress on the effects of impurities and defects on the properties of Ga2O3;Journal of Materials Chemistry C;2022