Advances and prospects in Ga2O3/GaN heterojunctions: From fabrication to high-performance devices-Reference-Cited by-同舟云学术

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Advances and prospects in Ga2O3/GaN heterojunctions: From fabrication to high-performance devices

Published:2025-01 Issue: Volume:185 Page:108874
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Xu Kaicheng,Wang Rui,Wang Yixuan,Wang Jin,Zhi Ting,Yang Guofeng,Xue Junjun,Chen Dunjun,Zhang Rong

Publisher

Elsevier BV

Reference279 articles.

1. Electrical conductive corundum-structured α-Ga2O3 thin films on sapphire with tin-doping grown by spray-assisted mist chemical vapor deposition;Akaiwa;Jpn. J. Appl. Phys.,2012

2. Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy;Onuma;Jpn. J. Appl. Phys.,2015

3. Evolution of corundum-structured III-oxide semiconductors: growth, properties, and devices;Fujita;Jpn. J. Appl. Phys.,2016

4. Ultrawide-bandgap semiconductors: research opportunities and challenges;Tsao;Adv Electron Mater,2017

5. AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89;Cicek;Appl. Phys. Lett.,2013

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