Prospects for phase engineering of semi-stable Ga2O3 semiconductor thin films using mist chemical vapor deposition

Abstract

Routes to semi-stable phases of Ga[Formula: see text]O[Formula: see text] are the subject of extended discussions based on the review of growth methods, growth conditions, and precursors in works that report semi-stable phases other than the thermally stable [Formula: see text] phase. The focus here is on mist chemical vapor deposition because it has produced single-phase Ga[Formula: see text]O[Formula: see text] of [Formula: see text], [Formula: see text], and [Formula: see text] (or [Formula: see text]) in terms of the substrate materials, and features of this growth method for phase control are emphasized. Recent reports of phase control by other growth technology give a deeper understanding of how to determine and control the phases, increasing the opportunities to fully utilize the novel and unique properties of Ga[Formula: see text]O[Formula: see text].