Critical role of dopant bond strength in enhancing the conductivity of n-type doped κ-Ga2O3-Reference-Cited by-同舟云学术

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Critical role of dopant bond strength in enhancing the conductivity of n-type doped κ-Ga2O3

Published:2024-07 Issue: Volume:511 Page:129546
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Feng Wenyong,Chen Xiaobo,Lin Zedong,Lu Xing,Liang Jun,Yu Sheng,Chen Zimin,Wang Gang,Pei Yanli^ORCID

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference48 articles.

1. Ultra-wide bandgap semiconductor Ga2O3 power diodes;Zhang;Nat. Commun.,2022

2. An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics;Zhou;Nat. Commun.,2023

3. High-Photoresponsivity Self-Powered a -, ε-, and β-Ga2O3 /p-GaN Heterojunction UV Photodetectors with an In Situ GaON Layer by MOCVD;Ma;ACS Appl. Mater. Interfaces,2022

4. Ga2O3 solar-blind position-sensitive detectors;Li;Sci. China Phys. Mech. Astron.,2020

5. Deep level transient spectroscopy investigation of ultra-wide bandgap (2̄01) and (001) β-Ga2O3;Montes;J. Appl. Phys.,2020

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