Sputtered Sn-doped Ga2O3 films under balance controlled of energy supply and ion bombardment for solar-blind detection application

Author:

Wang Chen,Fan Wei-Hang,Cao Rong-Jun,Fan Hui-Chen,Xu Yi-Hong,Kang Pin-Chun,Wu Ting-Zhu,Kuo Hao-Chung,Lien Shui-YangORCID,Zhu Wen-Zhang

Funder

Fujian Provincial Natural Science Foundation

Xiamen City Department of Science and Technology

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference73 articles.

1. Balanced performance for β-Ga2O3 solar blind photodetectors: the role of oxygen vacancies;Wang;Opt. Mater.,2021

2. Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire substrate by MOCVD;Park;Semicond. Sci. Technol.,2019

3. Electrical behavior of β -Ga2O3 Schottky diodes with different Schottky metals;Yao;J. Vac. Sci. Technol. B: Mater. Process. Meas, Phenom,2017

4. High-efficiency inGaN/GaN quantum well-based vertical light-emitting diodes fabricated on β-Ga2O3 substrate;Muhammed;ACS Appl. Mater. Interfaces,2017

5. Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes;Pérez-Tomás;Mater. Today Energy,2019

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