High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate-Reference-Cited by-同舟云学术

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High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate

Published:2017-09-22 Issue:39 Volume:9 Page:34057-34063
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Muhammed Mufasila M.¹,Alwadai Norah¹,Lopatin Sergei²,Kuramata Akito³,Roqan Iman S.¹^ORCID

Affiliation:

1. King Abdullah University of Science and Technology (KAUST), Physical Sciences and Engineering Division, Thuwal 23955-6900, Saudi Arabia

2. King Abdullah University of Science and Technology (KAUST), Imaging and Characterization Core Lab, Thuwal 23955-6900, Saudi Arabia

3. Tamura Corporation and Novel Crystal Technology, Inc., Sayama, Saitama 350-1328, Japan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b09584

Reference36 articles.

1. III–nitrides: Growth, characterization, and properties

2. Nakamura, S.; Pearton, S.; Fasol, G.The Blue Laser Diode: The Complete Story;Springer:Berlin, 2013; pp1–28.

3. Schubert, E. F.Light-Emitting Diodes;Cambridge University Press, 2006; pp1–26.

4. The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process

5. Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry

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