Effects of growth temperature on phase transformation and crystal quality of Ga2O3 films grown on Si/AlN composite substrates by MOCVD-Reference-Cited by-同舟云学术

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Effects of growth temperature on phase transformation and crystal quality of Ga2O3 films grown on Si/AlN composite substrates by MOCVD

Published:2024-08 Issue: Volume:178 Page:108453
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Hu Yu^ORCID,Zhang Li,Chen Tiwei,Huang Zijing,Li BoTong,Zhang Huanyu,Guo Gaofu,Zhao Dengrui,Xu Kun,Zhang Xiaodong,Shi Wenhua,Zeng Zhongming,Zhang Baoshun

Funder

Double Thousand Plan of Jiangxi Province

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference43 articles.

1. Effects of preparation parameters on growth and properties of β-Ga2O3 film;Chen;Chin. Phys. B,2023

2. High-photoresponsivity self-powered a-, epsilon-, and beta-Ga2O3/p-GaN heterojunction UV photodetectors with an in situ GaON layer by MOCVD;Ma;ACS Appl. Mater. Interfaces,2022

3. Gallium oxide-based solar-blind ultraviolet photodetectors, Semicond;Chen;Sci. Tech.,2020

4. Bandgap engineering of Gallium oxides by crystalline disorder;Chen;Mater. Today Phys.,2021

5. Review of Ga2O3-based optoelectronic devices;Guo;Mater. Today Phys.,2019

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