High-Photoresponsivity Self-Powered a-, ε-, and β-Ga2O3/p-GaN Heterojunction UV Photodetectors with an In Situ GaON Layer by MOCVD-Reference-Cited by-同舟云学术

High-Photoresponsivity Self-Powered a-, ε-, and β-Ga₂O₃/p-GaN Heterojunction UV Photodetectors with an In Situ GaON Layer by MOCVD

Published:2022-07-25 Issue:30 Volume:14 Page:35194-35204
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Ma Yongjian¹²^ORCID,Chen Tiwei¹²,Zhang Xiaodong¹²^ORCID,Tang Wenbo¹²,Feng Boyuan¹³,Hu Yu²,Zhang Li²,Zhou Xin²,Wei Xing¹²,Xu Kun²,Mudiyanselage Dinusha⁴,Fu Houqiang⁴,Zhang Baoshun¹²

Affiliation:

1. School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China

2. Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China

3. Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, 215123 Suzhou, China

4. Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011, United States

Funder

Ministry of Science and Technology of the People's Republic of China

Natural Science Foundation of Jiangxi Province

Key Laboratory Construction Project of Nanchang

Jiangxi Province Double Thousand Plan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c06927

Reference40 articles.

1. Vacuum-ultraviolet photodetectors

2. A general strategy to ultrasensitive Ga2O3 based self-powered solar-blind photodetectors

3. Analysis of the low-probability-of-detection characteristics of ultraviolet communications

4. Metal–Semiconductor–Metal ε-Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism

5. Vacuum-Ultraviolet Photon Detections

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