Metal–Semiconductor–Metal ε-Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism-Reference-Cited by-同舟云学术

Metal–Semiconductor–Metal ε-Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism

Published:2020-01-30 Issue:3 Volume:7 Page:812-820
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Qin Yuan¹²^ORCID,Li Liheng³,Zhao Xiaolong⁴,Tompa Gary S.⁵,Dong Hang¹²,Jian Guangzhong¹²,He Qiming¹,Tan Pengju⁴,Hou Xiaohu⁴,Zhang Zhongfang⁴,Yu Shunjie⁴,Sun Haiding⁴,Xu Guangwei⁴,Miao Xiangshui³,Xue Kanhao³^ORCID,Long Shibing⁴⁶,Liu Ming¹²⁶

Affiliation:

1. Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China

2. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

3. Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

4. School of Microelectronics, University of Science and Technology of China, Hefei, Anhui 230026, China

5. Structured Materials Industries Inc., Piscataway, New Jersey 08854, United States

6. Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, Jiangsu 210023, China

Funder

University of Science and Technology of China

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Key Laboratory of Microelectronic Devices Integrated Technology, Chinese Academy of Sciences

Chinese Academy of Sciences

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.9b01727

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4. Amorphous Gallium Oxide‐Based Gate‐Tunable High‐Performance Thin Film Phototransistor for Solar‐Blind Imaging

5. Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxy

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