Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire substrate by MOCVD
Author:
Funder
National Science Foundation
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/ab2c17/pdf
Reference20 articles.
1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
2. Perspective: Ga2O3for ultra-high power rectifiers and MOSFETS
3. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
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