First-principles investigations and MOCVD growth of Si-doped β-Ga2O3 thin films on sapphire substrates for enhancing Schottky barrier diode characteristics
Author:
Funder
National Applied Research Laboratories
National Science and Technology Council
Publisher
Elsevier BV
Reference47 articles.
1. Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS;Pearton;J. Appl. Phys.,2018
2. A review of gallium oxide-based power Schottky barrier diodes;Ji;J. Phys. D Appl. Phys.,2022
3. Nitrogen-doped β-Ga2O3 vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm2V−1s−1;Wakimoto;APEX,2023
4. Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs;McGlone;Appl. Phys. Lett.,2019
5. Fabrication of a Nb-doped β-Ga2O3 nanobelt field-effect transistor and its low-temperature behavior;Chen;ACS Appl. Mater. Interfaces,2020
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