Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs-Reference-Cited by-同舟云学术

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Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs

Published:2019-10-07 Issue:15 Volume:115 Page:153501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

McGlone Joe F.¹^ORCID,Xia Zhanbo¹^ORCID,Joishi Chandan¹²,Lodha Saurabh²^ORCID,Rajan Siddharth¹³,Ringel Steven¹³,Arehart Aaron R.¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

2. Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, Maharashtra 400076, India

3. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA

Funder

National Science Foundation

Air Force Office of Scientific Research

Defense Threat Reduction Agency

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5118250

Reference34 articles.

1. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

2. Some electrical properties of the semiconductor βGa2O3

3. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

4. Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV

5. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

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