A Review of gallium oxide-based Power Schottky barrier diodes

Abstract

Abstract Gallium oxide (Ga2O3) is a representative of ultra-wide bandgap semiconductor, with a bandgap of about 4.9 eV. In addition to a large dielectric constant, excellent physical and chemical stability, Ga2O3 has a breakdown electric field strength of more than 8 MV/cm, which is 27 times than that of Si and about twice larger than that of SiC and GaN. It is guaranteed that Ga2O3 has irreplaceable applications in ultra-high power (1-10 kW) electronic devices. Unfortunately, due to the difficulty of p-type doping of Ga2O3, only unipolar Ga2O3power Schottky diodes are feasible, but substantial progress has been made in recent years. In this article, we review the advanced progresses and important achievements of the state-of-the-arts Ga2O3 based power SBDs, and provide staged guidance for the further development of Ga2O3 power devices. The multiple type of device architectures, including basic structure, edge terminal processing, field plated, trench and heterojunction p-n structure, will be