Undoped β-Ga<sub>2</sub>O<sub>3</sub> Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate-Reference-Cited by-同舟云学术

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Undoped β-Ga₂O₃ Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate

Published:2024-01-04 Issue:1 Volume:6 Page:568-575
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Lu Chan-Hung¹,Tarntair Fu-Gow¹,Kao Yu-Cheng²,Tumilty Niall³,Horng Ray-Hua¹^ORCID

Affiliation:

1. Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROC

2. Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, ROC

3. International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROC

Funder

National Science and Technology Council

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01558

Reference37 articles.

1. Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS)

2. Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire substrate by MOCVD

3. MOCVD grown β-Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire

4. Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs

5. First Demonstration of Ga2O3Trench MOS-Type Schottky Barrier Diodes

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation and Comparison of the Performance for β-Ga2O3 Solar-Blind Photodetectors Grown on Patterned and Flat Sapphire Substrate;Crystals;2024-07-07

2. A 2.8 kV Breakdown Voltage α-Ga2O3 MOSFET with Hybrid Schottky Drain Contact;Micromachines;2024-01-14

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