The influence of 1nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference15 articles.
1. CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz
2. Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates
3. Two-dimensional electron-gas density in AlXGa1−XN/GaN heterostructure field-effect transistors
4. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
5. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
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1. Mole fraction effects on AlxGa1−xN/AlN/GaN MOSHEMT analog/RF performance: analytical model and simulation assessment;Microsystem Technologies;2024-08-24
2. Effect of AlN Interlayer Thickness on 2DEG Parameters in AlGaN/AlN/GaN HEMT Structures;2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM);2024-06-28
3. AlN interlayer-induced reduction of dislocation density in the AlGaN epilayer;CrystEngComm;2024
4. Investigation of DC and RF characteristics of spacer layer thickness engineered recessed gate and field‐plated III‐nitride nano‐HEMT on β‐Ga2O3 substrate;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-06-07
5. Fluorine Plasma Treatment for AlGaN/GaN HEMT-Based Ultraviolet Photodetector With High Responsivity and High Detectivity;IEEE Electron Device Letters;2023-05
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