Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates-Reference-Cited by-同舟云学术

Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates

Published:2005-08 Issue:8 Volume:49 Page:1387-1390
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Wang X.L.,Wang C.M.,Hu G.X.,Wang J.X.,Chen T.S.,Jiao G.,Li J.P.,Zeng Y.P.,Li J.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Very-high power density AlGaN/GaN HEMTs;Wu;IEEE Trans Electron Dev,2001

2. AlGaN/GaN HEMTs—an overview of device operation and applications;Mishra;Proc IEEE,2002

3. 30W/mm GaN HEMTs by field plate optimization;Wu;IEEE Electron Dev Lett,2004

4. Xiaoliang Wang, Cuimei Wang, Guoxin Hu, et al. Growth and Characteristics of 0.8μm gate length AlGaN/GaN HEMTs on sapphire substrates, Sci China (Series E), to be published.

5. Ando Y, Okamoto Y, Miyamoto H, et al. A low-distortion high-efficiency E-mode GaAs power FET based on a new method to improve device linearity focused on gm value, in IEDM Tech Dig Dec 1999, 405–8.

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