AlN interlayer-induced reduction of dislocation density in the AlGaN epilayer-Reference-Cited by-同舟云学术

AlN interlayer-induced reduction of dislocation density in the AlGaN epilayer

Published:2024 Issue:26 Volume:26 Page:3475-3482
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Tobaldi David Maria¹^ORCID,Lajaunie Luc²³^ORCID,Cretì Arianna⁴,Cuscunà Massimo¹,Tarantini Iolena⁵,Esposito Marco¹^ORCID,Balestra Gianluca¹⁵,Lomascolo Mauro⁴,Passaseo Adriana¹,Tasco Vittorianna¹^ORCID

Affiliation:

1. CNR NANOTEC Institute of Nanotechnology, Via Monteroni, Lecce 73100, Italy

2. Departamento de Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica, Facultad de Ciencias, Universidad de Cádiz, Campus Río San Pedro S/N, Puerto Real, 11510, Cádiz, Spain

3. Instituto Universitario de Investigación de Microscopía Electrónica y Materiales (IMEYMAT), Facultad de Ciencias, Universidad de Cádiz, Campus Río San Pedro S/N, Puerto Real, 11510, Cádiz, Spain

4. Institute for Microelectronic and Microsystems, CNR-IMM, Lecce 73100, Italy

5. Department of Mathematics and Physics “Ennio De Giorgi”, University of Salento, c/o Campus Ecotekne, Via Monteroni, 73100, Lecce, Italy

Abstract

The ultrawide-bandgap AlGaN alloy system shows great potential for advancing the next generation of UV optoelectronic devices.

Funder

European Commission

Ministerio de Economía y Competitividad

Ministerio de Ciencia e Innovación

Ministero dell'Università e della Ricerca

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CE/D4CE00191E

Reference39 articles.

1. Growth and applications of Group III-nitrides

2. Review—Reliability and Degradation Mechanisms of Deep UV AlGaN LEDs

3. Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps

4. The 2018 GaN power electronics roadmap

5. A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT Devices