Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps
Author:
Affiliation:
1. State Key Laboratory of Luminescence and Applications
2. Changchun Institute of Optics, Fine Mechanics and Physics
3. Chinese Academy of Sciences
4. Changchun 130033
5. China
Abstract
The compositional non-uniformity in AlGaN grown on HVPE-AlN with large macro-steps was effectively suppressed by metallization pretreatment using mixed metal–organic flows.
Funder
National Natural Science Foundation of China
Chinese Academy of Sciences
Youth Innovation Promotion Association of the Chinese Academy of Sciences
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2019/CE/C9CE00608G
Reference47 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
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