The 2018 GaN power electronics roadmap-Reference-Cited by-同舟云学术

The 2018 GaN power electronics roadmap

Published:2018-03-26 Issue:16 Volume:51 Page:163001
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Amano H,Baines Y,Beam E,Borga Matteo^ORCID,Bouchet T^ORCID,Chalker Paul R^ORCID,Charles M^ORCID,Chen Kevin J^ORCID,Chowdhury Nadim,Chu Rongming^ORCID,De Santi Carlo^ORCID,De Souza Maria Merlyne^ORCID,Decoutere Stefaan^ORCID,Di Cioccio L^ORCID,Eckardt Bernd,Egawa Takashi^ORCID,Fay P^ORCID,Freedsman Joseph J^ORCID,Guido L,Häberlen Oliver^ORCID,Haynes Geoff,Heckel Thomas,Hemakumara Dilini,Houston Peter,Hu Jie,Hua Mengyuan^ORCID,Huang Qingyun^ORCID,Huang Alex^ORCID,Jiang Sheng,Kawai H,Kinzer Dan,Kuball Martin^ORCID,Kumar Ashwani,Lee Kean Boon^ORCID,Li Xu,Marcon Denis^ORCID,März Martin,McCarthy R^ORCID,Meneghesso Gaudenzio^ORCID,Meneghini Matteo^ORCID,Morvan E^ORCID,Nakajima A^ORCID,Narayanan E M S^ORCID,Oliver Stephen,Palacios Tomás,Piedra Daniel,Plissonnier M,Reddy R^ORCID,Sun Min^ORCID,Thayne Iain,Torres A,Trivellin Nicola^ORCID,Unni V,Uren Michael J^ORCID,Van Hove Marleen^ORCID,Wallis David J^ORCID,Wang J^ORCID,Xie J^ORCID,Yagi S,Yang Shu^ORCID,Youtsey C^ORCID,Yu Ruiyang^ORCID,Zanoni Enrico^ORCID,Zeltner Stefan,Zhang Yuhao

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/51/i=16/a=163001/pdf

Reference175 articles.

1. AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance

2. Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- $\mu\hbox{m}$ Buffer Thickness by Local Substrate Removal

3. Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics

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