Synthesis of nano-diamond film on GaN surface with low thermal boundary resistance and high thermal conductivity-Reference-Cited by-同舟云学术

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Synthesis of nano-diamond film on GaN surface with low thermal boundary resistance and high thermal conductivity

Published:2024-10 Issue: Volume:229 Page:119491
ISSN:0008-6223
Container-title:Carbon
language:en
Short-container-title:Carbon

Author:

Hao Zhiheng,Huang Ke,Deng Kexin^ORCID,Sun Fangyuan,Liu Jinlong,Chen Liangxian,Mandal Soumen^ORCID,Williams Oliver A.,Li Chengming,Wang Xinhua^ORCID,Wei Junjun^ORCID

Publisher

Elsevier BV

Reference81 articles.

1. Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates;Cao;Appl. Phys. Lett.,2018

2. A review of GaN on SiC high electron-mobility power transistors and MMICs;Pengelly;IEEE. T. MICROW. THEORY,2012

3. The 2018 GaN power electronics roadmap;Amano;J. Phys. D Appl. Phys.,2018

4. Thermal properties of bulk polycrystalline CVD diamond;Wort;Diam. Relat. Mater.,1994

5. Thermal conductivity of high purity synthetic single crystal diamonds;Inyushkin;Phys. Rev. B,2008

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