Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates-Reference-Cited by-同舟云学术

Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates

Published:2018-06-25 Issue:26 Volume:112 Page:262103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cao Lina¹^ORCID,Wang Jingshan¹,Harden Galen¹,Ye Hansheng¹,Stillwell Roy¹,Hoffman Anthony J.¹,Fay Patrick¹^ORCID

Affiliation:

1. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA

Funder

Office of Naval Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5031785

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4. J. Wang , L. Cao , J. Xie , E. Beam , R. McCarthy , C. Youtsey , and P. Fay , in 2017 IEEE International Electron Devices Meeting (IEDM) (IEEE, 2017), pp. 6–9.

5. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

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