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1.7-kV vertical GaN p-n diode with triple-zone graded junction termination extension formed by ion-implantation

  • Published:2023-12 Issue: Volume:6 Page:100330
  • ISSN:2772-6711
  • Container-title:e-Prime - Advances in Electrical Engineering, Electronics and Energy
  • language:en
  • Short-container-title:e-Prime - Advances in Electrical Engineering, Electronics and Energy

Author:

Duan YuORCID,Wang Jingshan,Xie Andy,Zhu Zhongtao,Fay Patrick

Funder

Army Research Office

Advanced Research Projects Agency - Energy

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,General Engineering,Energy Engineering and Power Technology

Reference46 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications;Mishra;Proc. IEEE,2002

2. 1000-V, 30-A 4H-SiC BJTs with high current gain;Krishnaswami;IEEE Electron. Device Lett.,2005

3. Silicon carbide high-power devices;Weitzel;IEEE Trans. Electron. Devices,1996

4. Advanced SiC and GaN power electronics for automotive systems;Kanechika,2010

5. Applications of high power electronic switches in the electric power utility industry and the needs for high power switching devices;Heydt;MRS Online Proc. Lib. (OPL),1997

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