1.7-kV vertical GaN p-n diode with triple-zone graded junction termination extension formed by ion-implantation

Author:

Duan YuORCID,Wang Jingshan,Xie Andy,Zhu Zhongtao,Fay Patrick

Funder

Army Research Office

Advanced Research Projects Agency - Energy

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,General Engineering,Energy Engineering and Power Technology

Reference46 articles.

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4. Advanced SiC and GaN power electronics for automotive systems;Kanechika,2010

5. Applications of high power electronic switches in the electric power utility industry and the needs for high power switching devices;Heydt;MRS Online Proc. Lib. (OPL),1997

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