AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance-Reference-Cited by-同舟云学术

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AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance

Published:2009-04-20 Issue:4 Volume:48 Page:04C101
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Visalli Domenica,Van Hove Marleen,Derluyn Joff,Degroote Stefan,Leys Maarten,Cheng Kai,Germain Marianne,Borghs Gustaaf

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference9 articles.

1. Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon

2. AlGaN/GaN Power HFET on Silicon Substrate With Source-Via Grounding (SVG) Structure

3. The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate

4. C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE

5. 20 mΩ, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate

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1. Investigation of Nondestructive and Noncontact Electrical Characterization of GaN Thin Film on ScAlMgO₄ Substrate Using Terahertz Time‐Domain Spectroscopic Ellipsometry with Characteristic Impedance Analytical Model;physica status solidi (b);2024-04-10

2. Adiabatic Potential for Conformational Change of V_Ga–V_N Complex Defects in GaN;physica status solidi (b);2024-03-31

3. Low stress AlGaN/GaN heterojuction with AlGaN buffer grown on 6-inch semi-insulating SiC substrate;Journal of Crystal Growth;2023-06

4. Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application;Applied Physics Letters;2022-06-27

5. Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes;Micromachines;2022-05-26

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